Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides
Author:
Affiliation:
1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
Funder
CAS-SAFEA International Partnership Program for Creative Research Teams
National Natural Science Foundation of China
Chinese Academy of Sciences
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b02513
Reference44 articles.
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