Defective and doped aluminum nitride monolayers for NO adsorption: Physical insight-Reference-Cited by-同舟云学术

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Defective and doped aluminum nitride monolayers for NO adsorption: Physical insight

Published:2020-08 Issue: Volume:753 Page:137592
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Du Wenzheng,Zhao Chuanzong,Liu Kunpeng,Li Hu,Chen Yougen,Bai Yanwen,Ahuja Rajeev^ORCID,Qian Zhao

Funder

Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Young Scholars Program of Shandong University

Education Program of Shandong University

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference25 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. The two-dimensional phase of boron nitride: few-atomic-layer sheets and suspended membranes;Pacile;Appl. Phys. Lett.,2008

3. Single-layer MoS2 transistors;Radisavljevic;Nat. Nanotechnol.,2011

4. Ab initio study on gas sensing properties of group III (B, Al and Ga) doped graphene;Varghese;Comput. Condens. Mat.,2016

5. Phosphorene: an unexplored 2D semiconductor with a high hole mobility;Liu;ACS Nano,2014

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