Author:
Fullam S.,Ray N.J.,Karpov E.G.
Funder
Center for Nanoscale Materials at Argonne National Laboratory
U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Nanoionics-based resistive switching memories;Waser;Nat. Mater.,2007
2. A journey towards reliability improvement of TiO2 based resistive random access memory: a review;Acharyya;Microelectron. Reliab.,2014
3. C.-H. Wang, Y.-H. Tsai, K.-C. Lin, M.-F. Chang, Y.-C. King, C.-J. Lin, S.-S. Sheu, Y.-S. Chen, H.-Y. Lee, F.T. Chen, M.-J. Tsai, Three-dimensional 4F2 ReRAM cell with CMOS logic compatible process, in: 2010 IEEE International Electron Devices Meeting (IEDM), 2010, pp. 29.6.1–29.6.4. http://dx.doi.org/10.1109/IEDM.2010.5703446.
4. Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application;Biju;Curr. Appl. Phys.,2011
5. A flexible solution-processed memristor;Gergel-Hackett;IEEE Electron Device Lett.,2009
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献