Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application-Reference-Cited by-同舟云学术

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Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application

Published:2011-07 Issue:4 Volume:11 Page:S102-S106
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Biju Kuyyadi P.,Liu Xinjun,Shin Jungho,Kim Insung,Jung Seungjae,Siddik Manzar,Lee Joonmyoung,Ignatiev Alex,Hwang Hyunsang

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference20 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Memristive switching mechanism for metal/oxide/metal nanodevices

3. Asymmetric electrical bistable behavior of an eicosanoic acid/zirconium oxide bilayer system with rectifying effect

4. High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resistive switching characteristics and mechanism of W/TiO2/ITO devices;Materials Today: Proceedings;2023-05

2. Binary metal oxide-based resistive switching memory devices: A status review;Materials Today Communications;2023-03

3. Filamentary Resistive Switching in an SrTiO₃/TiO₂ Heterostructured Nanotube Array;ACS Applied Electronic Materials;2023-01-04

4. Resistive switching characteristics of W/TiO2/ITO devices;Materials Today: Proceedings;2023

5. Strategic allocation of two-dimensional van der Waals semiconductor as an oxygen reservoir for boosting resistive switching reliability;Applied Surface Science;2022-03

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