The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers-Reference-Cited by-同舟云学术

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The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers

Published:2015-06 Issue: Volume:82 Page:151-157
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhang Yuanwen,Yu Lei,Li Kai,Pi Hui,Diao Jiasheng,Wang Xingfu,Shen Yue,Zhang Chongzhen,Hu Wenxiao,Song Weidong,Li Shuti

Funder

National Nature Science Foundation of China

Science and Technology Program of Guangdong province, China

Science and Technology Program of Guangzhou

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Solar-blind UV region and UV detector development objectives

4. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

5. Advances in group III-nitride-based deep UV light-emitting diode technology

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Developing Deep Ultraviolet Laser Diode: Design and Improvement of Al0.62Ga0.38N/Al0.68Ga0.32N Quantum Wells on AlN Substrates for 266 nm DUV Emission;Optics & Laser Technology;2024-08

2. Investigation on the performance of deep ultraviolet edge emitting laser diodes using graded undoped AlGaN electron blocking layer (EBL);Micro and Nanostructures;2024-08

3. Enhanced characteristics in AlGaN-based deep ultraviolet light-emitting diodes with interval-graded barrier superlattice electron blocking layers;Micro and Nanostructures;2024-07

4. Effect of periodically varying chirped AlxInyGa(1-x-y)N/ Al0.70Ga0.30N Super-Lattice based electron blocking region for nearly droop free UV-C LEDs;Materials Science and Engineering: B;2024-01

5. Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer;Optical and Quantum Electronics;2023-11-30

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