Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Tunnel perspectives of low-power VLSIs;Sakurai;IEICE Trans. Electron.,2004
2. Field-effect transistors as energy efficient electronic switches;Ionescu;Nature,2011
3. Tunneling field-effect transistor (TFETs) with subthreshold swing(ss) less than 60mV/Dec;Choi;IEEE Electron. Device Lett.,2007
4. Performance enhancement of vetical tunnel field-effect transistor with SiGe in the δp+ layer;Bhuwalka;Jpn. J. Appl. Phys.,2004
5. Double-gate tunnel TFET with high-κ gate dielectric;Boucart;IEEE Trans. Electron. Devices,2007
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