N-structure based on InAs/AlSb/GaSb superlattice photodetectors-Reference-Cited by-同舟云学术

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N-structure based on InAs/AlSb/GaSb superlattice photodetectors

Published:2015-03 Issue: Volume:79 Page:116-122
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Hostut M.,Alyoruk M.,Tansel T.,Kilic A.,Turan R.,Aydinli A.,Ergun Y.

Funder

Anadolu University

Akdeniz University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

2. Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

3. InAs/GaSb superlattices for advanced infrared focal plane arrays

4. A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement

5. InAs/GaSb superlattice technology

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors;Journal of Physics D: Applied Physics;2021-06-11

2. First principles calculation of the structural, electronic, optical and elastic properties of the cubic Al Ga1-Sb ternary alloy;Optical Materials;2021-03

3. Theoretical analysis on the energy band properties of N- and M-structure type-II superlattices;Superlattices and Microstructures;2020-09

4. A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors;Japanese Journal of Applied Physics;2020-04-01

5. The detailed analysis of wavefunction overlaps for InAs/AlSb/GaSb based N-structure type-II SL pin photodetectors;Physica Scripta;2019-04-26

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