Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography-Reference-Cited by-同舟云学术

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Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography

Published:2010-10 Issue:4 Volume:48 Page:358-364
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Lo H.M.,Hsieh Y.T.,Shei S.C.,Lee Y.C.,Zeng X.F.,Weng W.Y.,Lin N.M.,Chang S.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. AlGaInP-sapphire glue bonded light-emitting diodes

2. Measurement of the barrier height of a multiple quantum barrier (MQB)

3. High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier

4. The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer

5. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrafast exciton dynamics in colloidal aluminum phosphide nanocrystals;Chemical Physics Letters;2013-02

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