Electrical and structural properties of rapidly annealed rare-earth metal Er Schottky contacts on p-type InP-Reference-Cited by-同舟云学术

Electrical and structural properties of rapidly annealed rare-earth metal Er Schottky contacts on p-type InP

Published:2014-01 Issue: Volume:65 Page:206-218
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Dasaradha Rao L.,Rajagopal Reddy V.,Janardhanam V.,Kang Min-Sung,Son Byoung-Chul,Choi Chel-Jong

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference44 articles.

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3. A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure

4. Temperature dependence of the electrical characteristics of Yb/p‐InP tunnel metal‐insulator‐semiconductor junctions

5. Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy

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