Controlled porosity of GaN using different pore size of Si (100) substrates
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates;Yang;Appl. Phys. Lett.,2000
2. Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si (111): impact of an AlGaN/GaN multilayer;Dadgar;Appl. Phys. Lett.,2001
3. Porous silicon as and intermediate buffer layer for GaN growth on (100) Si;Matoussi;Microelectron. J.,2001
4. Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE;Chaaben;Superlattices Microstruct.,2006
5. GaN growth on porous silicon by MOVPE;Boufaden;Microelectron. J.,2003
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