Morphological and structural characteristics of Gallium Nitride (GaN) porosity using image processing-Reference-Cited by-同舟云学术

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Morphological and structural characteristics of Gallium Nitride (GaN) porosity using image processing

Published:2022-12 Issue: Volume:271 Page:170126
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Isa Iza Sazanita,Isa Siti Mariyam,Abd Manaf Asrulnizam,Abd Rahim Alhan Farhanah,Mahmood Ainorkhilah,Abdullah Mohd Hanapiah,Ad Fauzi Normasni

Funder

Universiti Teknologi MARA

Ministry of Higher Education, Malaysia

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. 6 - GaN-on-GaN power device design and fabrication;Chowdhury,2019

2. Porous nitride semiconductors reviewed;Griffin;J. Phys. D Appl. Phys.,2020

3. Morphological and Optical Properties of Porous Gallium Nitride (GaN) Fabricated by Photoelectrochemical Process;Fong,2015

4. Growth and Characterization of Gallium Nitride Films on Porous Silicon Subtrate;Samsudin,2016

5. Porous silicon fabrication and surfacecracking behavior research based on anodic electrochemical etching;Yang;Fuel Cells,2019

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates;Journal of Applied Physics;2024-07-22

2. Modelling the hydraulic performance of open graded asphalt using the discrete element method and computational fluid dynamics;Journal of Hydrology;2023-06

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