Simulation and optimization of high breakdown double-recessed 4H-SiC MESFET with metal plate termination technique
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference37 articles.
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4. A novel SOI MESFET to spread the potential contours towards the drain;International Journal of Electronics;2020-02-19
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