Nitrogen-doped NDR behavior of double gate graphene field effect transistor
Author:
Funder
SERB
DST
Government of India
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference35 articles.
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4. Room-temperature negative differential resistance in graphene field effect transistors: experiments and theory;Sharma;ACS Nano,2015
5. Carrier sheet density constrained anomalous currentsaturation of graphene field effect transistors: kinks andnegative differential resistances;Wang;Nanoscale,2013
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