Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory-Reference-Cited by-同舟云学术

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Published:2015-01-02 Issue:1 Volume:9 Page:620-625
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Sharma Pankaj¹,Bernard Laurent Syavoch¹,Bazigos Antonios¹,Magrez Arnaud¹,Ionescu Adrian M.¹

Affiliation:

1. Nanoelectronics Devices Laboratory, ‡Laboratory of Physics of Complex Matter, and §Crystal Growth Facility, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

Funder

European Commission Directorate-General for Research and Innovation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn5059437

Reference23 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Three-Terminal Graphene Negative Differential Resistance Devices

4. Graphene-based non-Boolean logic circuits

5. Current Saturation in Submicrometer Graphene Transistors with Thin Gate Dielectric: Experiment, Simulation, and Theory

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