X-ray reciprocal space mappings of high Indium content InGaN multi-quantum-wells modified by V-shape interfaces-Reference-Cited by-同舟云学术

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X-ray reciprocal space mappings of high Indium content InGaN multi-quantum-wells modified by V-shape interfaces

Published:2017-09 Issue: Volume:109 Page:431-436
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Xue Junjun,Cai Qing,Zhang Baohua,Ge Mei,Chen Dunjun,Chen Jiangwei,Zhi Ting,Tao Zhikuo,Wang Lianhui,Zhang Rong

Funder

Natural Science Foundation of Jiangsu Province

NSFC

University Science Research Project of Jiangsu Province

NUPTSF

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. P-GaN/n-InGaN/n-GaN double-heterostructure blue-light-emitting diodes;Nakamura;Jpn. J. Appl. Phys.,1993

2. Unusual properties of the fundamental band gap of InN;Wu;Appl. Phys. Lett.,2002

3. Properties, processing and applications of gallium nitride and related semiconductor;Edgar;Microelectron. J.,2000

4. X-ray double and triple-crystal diffractometry of mosaic structure in heteroepitaxial layers;Holý;J. Appl. Phys.,1993

5. Mosaicity of GaN epitaxial layers: simulation and experiment;Chierchia;Status Solidi B Phys.,2001

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1. Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling;Journal of Nanophotonics;2024-04-10

2. Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields;Optical and Quantum Electronics;2023-04-08

3. Investigating the valence-band bound states in GaAs/GaAsSb/GaAs V-shaped quantum wells: The role of intense laser fields and position-dependent effective mass;Physica E: Low-dimensional Systems and Nanostructures;2022-08

4. Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film;Japanese Journal of Applied Physics;2019-05-28

5. Effect of indium droplets on growth of InGaN film by molecular beam epitaxy;Superlattices and Microstructures;2018-01

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