Electrical performance and photosensitive properties of Cu/SiO2/Si –MOS based junction prepared by liquid phase epitaxy-Reference-Cited by-同舟云学术

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Electrical performance and photosensitive properties of Cu/SiO2/Si –MOS based junction prepared by liquid phase epitaxy

Published:2017-09 Issue: Volume:109 Page:662-674
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ashery A.,Elnasharty Mohamed M.M.,Farag A.A.M.,Salem M.A.,Nasralla N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference55 articles.

1. Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si

2. Development of hafnium based high-k materials—A review

3. Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements

4. The structure and electrical properties of HfTaON high-k films prepared by DIBSD

5. Atomic layer etching of ultra-thin HfO2film for gate oxide in MOSFET devices

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3. In-depth dielectric study of bulk nanocrystalline β-H2Pc with different biasing and photovoltaic performance of β-H2Pc/p-Si solar cell under varied illumination;Indian Journal of Physics;2024-07-18

4. Negative series resistance and photo-response properties of Au/PPY-MWCNTs composite/TiO2/Al2O3/n-Si/Al photodiode;Materials Research Express;2022-01-01

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