On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

Published:2018-01 Issue: Volume:113 Page:472-477
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chu Chunshuang,Tian Kangkai,Fang Mengqian,Zhang Yonghui,Li Luping,Bi Wengang^ORCID,Zhang Zi-Hui

Funder

National Natural Science Foundation of China

Natural Science Fund for Excellent Young Scholars of Hebei Province

Natural Science Foundation of Tianjin City

Colleges and Universities of Hebei Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

3. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

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