Extrinsic base surface-passivated dual-emitter heterojunction phototransistors-Reference-Cited by-同舟云学术

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Extrinsic base surface-passivated dual-emitter heterojunction phototransistors

Published:2006-07 Issue:1 Volume:40 Page:45-55
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chen Wei-Tien,Chen Hon-Rung,Hsu Meng-Kai,Chiu Shao-Yen,Lour Wen-Shiung

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling

2. High sensitivity In0.53Ga0.47As/InP heterojunction phototransistor

3. High gain GaN/AlGaN heterojunction phototransistor

4. Noise characteristics of GaAs-AlGaAs heterojunction punch-through phototransistors

5. Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment;Japanese Journal of Applied Physics;2008-01-18

2. Promoted Potential of Heterojunction Phototransistor for Low-Power Photodetection by Surface Sulfur Treatment;Journal of The Electrochemical Society;2007

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