Features of the potential barrier and current flow in the narrow Schottky diodes-Reference-Cited by-同舟云学术

Features of the potential barrier and current flow in the narrow Schottky diodes

Published:2013-08 Issue: Volume:60 Page:300-310
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mamedov R.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. R.K. Mamedov, Metal – Semiconductor Contacts with Electric Spots Field, Baku, 2003.

2. Atomic force microscopy study of the potential distribution over a locally metallized n-GaAs Surface;Torkhov;J. Surf. Invest. X-ray, Synchrotron Neutron Tech.,2009

3. Nature of forward and reverse saturation currents in metal–semiconductor contacts with Schottky barrier;Torkhov;Fizika i Texnika Poluprovodnikov,2010

4. Influence of periphery of metal–semiconductor contacts with Schottky barrier on their electrophysical characteristics;Torkhov;Fizika i Texnika Poluprovodnikov,2011

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