Selective Si growth on partially desorbed SiO2/Si(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices
2. Selective growth of SiGe structures in the sub 100 nm range using low pressure vapor phase epitaxy
3. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
4. The nanometer-scale selective overgrowth of Ge over Si islands on Si() windows in ultrathin SiO2 films
5. Selective growth of Ge quantum dots on chemically prepared SiO2/Si(001) surfaces
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding;Thin Solid Films;2018-02
2. Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2;Journal of Crystal Growth;2014-09
3. Morphology Analysis of Si Island Arrays on Si(001);Nanoscale Research Letters;2010-08-11
4. Formation of pyramid-like nanostructures in MBE-grown Si films on Si(001);Applied Physics A;2010-08-05
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