Selective growth of Ge quantum dots on chemically prepared SiO2/Si(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Si/Si1-xGexdots grown by selective epitaxy
2. Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices
3. Selective growth of SiGe structures in the sub 100 nm range using low pressure vapor phase epitaxy
4. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
5. Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy
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