Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. UV-emitting diode composed of transparent oxide semiconductors: p-SrCu2O2/n-ZnO
2. Band-gap narrowing in heavily defect-doped ZnO
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1. Kramers-Kronig analysis of the optical linearity and nonlinearity of nanostructured Ga-doped ZnO thin films;Optics & Laser Technology;2021-03
2. Structural, bandgap tuning and electrical properties of Cu doped ZnO nanoparticles synthesized by mechanical alloying;Journal of Materials Science: Materials in Electronics;2017-06-24
3. Effects of uniaxial stress on the electrical structure and optical properties of Al-doped n-type ZnO;Solar Energy;2016-12
4. Approach using the electrical structure and optical properties of aluminium-doped zinc oxide for solar cells;RSC Advances;2016
5. Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films;Materials Science-Poland;2015-09-01
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