Schottky bipolar I-MOS: An I-MOS with Schottky electrodes and an open-base BJT configuration for reduced operating voltage

Author:

Kannan N.,Kumar M. Jagadesh

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Performance comparison of silicon steep subthreshold FETs;Tura;IEEE Trans. Electron Devices,2010

2. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011

3. I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q;Gopalakrishnan,2002

4. Impact ionization MOS (I-MOS)-part I: device and circuit simulations;Gopalakrishnan;IEEE Trans. Electron Devices,2005

5. Co-integration of 2 mV/dec subthreshold slope impact ionization MOS (I-MOS) with CMOS;Mayer,2006

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