Performance analysis of nanoscale germanium on insulator MOSFETs for mixed-signal system-on-chip applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference30 articles.
1. Electrical characterization of germanium p-channel MOSFETs
2. High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants
3. Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs
4. High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances
5. High-Performance Deep Submicron Ge pMOSFETs With Halo Implants
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1. Molecular Dynamics Simulations of Packing Structures and Local Stress in the Ge(100)/Si(110) Interface at Atomic Scale;Nano;2023-01
2. Effects of asymmetric underlap spacers on nanoscale junctionless transistors and design of optimised CMOS amplifiers;IET Circuits, Devices & Systems;2019-06-03
3. Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscale;Acta Physica Sinica;2019
4. Molecular dynamics study of the effect of point defects on the stress at the Si/Ge interface;Applied Surface Science;2018-10
5. Studies of buried oxide properties on nanoscale GeOI pMOSFETs for design of a high performance common source amplifier;Materials Science in Semiconductor Processing;2018-06
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