Studies of buried oxide properties on nanoscale GeOI pMOSFETs for design of a high performance common source amplifier
Author:
Funder
UGC NET JRF
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference34 articles.
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4. Understanding the Potential and the limits of germanium pMOSFETs for VLSI circuits from experimental measurements;Magnone;IEEE Trans. VLSI Syst.,2011
5. Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations;Van der Steen;IEEE Trans. Electron Dev.,2007
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Suppression of buried oxide induced variability on digital performance of GeOI pMOSFETs using substrate bias scheme;Microsystem Technologies;2019-11-28
2. Layout Study of Strained Ge-Based pMOSFETs Integrated With S/D GeSn Alloy and CESL by Using Process-Oriented Stress Simulations;IEEE Transactions on Electron Devices;2018-11
3. Enhancing digital performance of nanoscale GeOI MOSFETs through optimization of buried oxide properties and channel thickness;Microsystem Technologies;2018-09-11
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