Physics based analytical model for surface potential and subthreshold current of cylindrical Schottky Barrier gate all around MOSFET with high-k gate stack-Reference-Cited by-同舟云学术

Physics based analytical model for surface potential and subthreshold current of cylindrical Schottky Barrier gate all around MOSFET with high-k gate stack

Published:2016-02 Issue: Volume:90 Page:215-226
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Kumar Manoj,Haldar Subhasis,Gupta Mridula,Gupta R.S.

Funder

DRDO

All India Council of Technical Education

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference32 articles.

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4. Analog/RF performance of Si nanowire MOSFETs and the impact of process variation;Wang;IEEE Trans. Electron Devices,2007

5. Investigation of parasitic effects and design optimization in silicon nanowire MOSFETs for RF applications;Zhuge;IEEE Trans. Electron Devices,2008

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