Optical properties of exciton confinement in spherical ZnO quantum dots embedded in matrix
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Excitonic and defect related transitions in ZnO-SiO2 nanocomposites synthesized by sol-gel technique
2. Recent progress in processing and properties of ZnO
3. Hall Effect Studies of Doped Zinc Oxide Single Crystals
4. Residual Native Shallow Donor in ZnO
5. Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative study of ZnO/Zn1−xMgxO MQWs containing two defects of different nature under the effect of applied pressure and temperature for sensing application;Physica B: Condensed Matter;2023-12
2. Theoretical Study of Hydrostatic Pressure and Temperature Effect on a Multi-Quantum well ZnO/Zn<sub>1-X</sub>Mg<sub>x</sub>O Containing a Staircase Defect for Sensing Application;Defect and Diffusion Forum;2023-08-22
3. Anomalous Stark effect and optical properties of exciton in a quantum dot with linear potential under ionized donor hydrogenic impurity;Current Applied Physics;2023-04
4. Theoretical Study of the Sensitivity of the Localized Electronic States Induced by the Presence of Defects in a ZnO/Zn1−xMgxO MQWs Under Hydrostatic Pressure and Temperature;Lecture Notes in Electrical Engineering;2023
5. Theoretical and simulation study of pressure and temperature effect on the electronic states induced by the presence of a material defect in ZnO/ZnMgO MQWs;E3S Web of Conferences;2022
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3