Theoretical Study of the Sensitivity of the Localized Electronic States Induced by the Presence of Defects in a ZnO/Zn1−xMgxO MQWs Under Hydrostatic Pressure and Temperature-Reference-Cited by-同舟云学术

Theoretical Study of the Sensitivity of the Localized Electronic States Induced by the Presence of Defects in a ZnO/Zn1−xMgxO MQWs Under Hydrostatic Pressure and Temperature

Published:2023 Issue: Volume: Page:231-240
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
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Author:

Baidri Abdelkader,Elamri Fatima Zahra,Falyouni Farid,Ben-Ali Youssef,Bria Driss

Publisher

Springer Nature Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-19-6223-3_26

Reference16 articles.

1. Ezzarfi A, Elamri FZ, Safi FZ, Bouchafra Y, Ben-Ali Y, Sali A, Bria D (2021) High quality factor multichannel filter of electrons based on defective CdMnTe/CdTe multi-quantum wells. Phys Scr 96(12):125811

2. Elamri FZ, Falyouni F, Kerkour-El Miad A, Bria D (2019) Effect of defect layer on the creation of electronic states in GaAs/GaAlAs multi-quantum wells. Appl Phys A 125(10):1–12

3. Ezzarfi A, Elsamri FZ, Bouchafra Y, Ben-Ali Y, Sali A, Bria D (2021) Localized defect states based on defective multi-quantum wells. Mater Today Proc 45:7388–7393

4. Elamri FZ, Falyouni F, Bria D (2020) Effect of a barrier defect in the creation of localized states in the structure of multi-quantum wells. Mater Today Proc 27:3101–3107

5. Segovia-Chaves F, Vinck-Posada H (2018) Simultaneous effects of the hydrostatic pressure and the angle of incidence on the defect state of a one-dimensional photonic crystal of GaAs/Ga0.7Al0.3As. Optik 164:686–690

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1. Electronic Localized States Behaviour in a GaAs/GaAlAs Multi-Quantum Wells with a Geo-Material and a Material Defects;Solid State Phenomena;2023-10-06

2. Theoretical Study of Hydrostatic Pressure and Temperature Effect on a Multi-Quantum well ZnO/Zn<sub>1-X</sub>Mg<sub>x</sub>O Containing a Staircase Defect for Sensing Application;Defect and Diffusion Forum;2023-08-22