Donor binding energies in a GaN/ZnGeN2 quantum well
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference27 articles.
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2. Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources;Du;J. Cryst. Growth,2008
3. First-principles study of phonons and related ground-state properties and spectra in Zn-IV-N2 compounds;Paudel;Phys. Rev. B,2008
4. First-principles calculations of elasticity, polarization-related properties, and nonlinear optical coefficients in Zn-IV-N2 compounds;Paudel;Phys. Rev. B,2009
5. Quasiparticle band structure of Zn-IV-N2 compounds;Punya;Phys. Rev. B,2011
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1. Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect;Journal of the Korean Physical Society;2024-05-28
2. Intrinsic surface states with electron–surface optical phonon interaction influence in wurtzite Zn-IV-N2 semiconductors;Modern Physics Letters B;2024-03-12
3. Investigating the potential of earth-abundant ZnSnxGe1-xN2 alloys for quantum well solar cells;Micro and Nanostructures;2023-12
4. Donor binding energies in single ZnCdO/ZnO quantum well;Thin Solid Films;2022-08
5. Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures;Physics Letters A;2019-04
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