Intrinsic surface states with electron–surface optical phonon interaction influence in wurtzite Zn-IV-N2 semiconductors

Abstract

The electronic intrinsic surface states in wurtzite Zn-IV-N2 (with group-[Formula: see text], Ge and Si) semiconductors were investigated using an intermediate-coupling variational approach considering the electron–surface optical phonon interaction influence. The intrinsic surface state energy distribution and the average penetrating depth of surface state eigen-wave function of the electron have been evaluated numerically by changing the surface potential barrier [Formula: see text] for wurtzite ZnSnN2, ZnGeN2 and ZnSiN2, respectively. The results show that the electronic intrinsic surface state energy increased linearly with increasing surface potential barrier [Formula: see text] for all the calculated materials. The result also indicated that the electronic intrinsic surface state energies variations due to the influence of electron–surface optical phonon interaction are dozens of[Formula: see text]meV. The average penetrating depth of electronic surface state eigen-wave function is independent of [Formula: see text]. Its value is no more than the corresponding material’s lattice constant. The electronic scattering by surface optical phonon should be taken into account in the study of the intrinsic surface state of electrons in the group of Zn-IV-nitrides (with [Formula: see text], Ge and Si) semiconductors, especially for materials having strong electron–phonon interaction and wide band gap.