A novel high mobility In1-xGaxAs cylindrical-gate-nanowire FET for gas sensing application with enhanced sensitivity

Author:

Singh Navaneet Kumar,Raman Ashish,Singh Sarabdeep,Kumar Naveen

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Gate-all-around nanowire MOSFET with catalytic metal gate for gas sensing applications;Gautam;IEEE Trans. Nanotechnol.,2013

2. Palladium gate all around - hetero dielectric -tunnel FET based highly sensitive hydrogen gas sensor;Madan;Superlattices Microstruct.,2016

3. Analytical description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs;Oh;IEEE Electron Device Lett.,2000

4. A two-dimensional analytical solution for short-channel effects in nanowire MOSFETs;Yu;IEEE Trans. Electron Devices,2009

5. Silicon nanowire FET hydrogen gas sensor: design aspects;Dubey;Int. J. Emerg. Technol. Eng. (IJETE),2014

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