The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors-Reference-Cited by-同舟云学术

The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors

Published:2012-11 Issue:5 Volume:52 Page:962-976
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Naderi Ali,Keshavarzi Parviz

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

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4. P. Avouris, A. Afzali, J. Appenzeller, J. Chen, M. Freitag, C. Klinke, Y.-M. Lin, J.C. Tang, Carbon nanotube electronics and optoelectronics, in: IEDM Tech. Dig., 2004, pp. 525–529.

5. A model for carbon nanotube FETs in the ballistic limit;Yousefi;Microelectron. J.,2011

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