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P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

  • Published:2016-12 Issue: Volume:100 Page:468-473
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Zhang Zhiyuan,Huang Jingyun,Chen Shanshan,Pan Xinhua,Chen Lingxiang,Ye Zhizhen

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province, China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. A comprehensive review of ZnO materials and devices;Ӧzgür;J. Appl. Phys.,2005

2. Progress in ZnO acceptor doping: what is the best strategy?;Reynolds;Adv. Condens. Matter Phys.,2014

3. Investigation on the formation mechanism of p-type Li-N dual-doped ZnO;Zhang;Appl. Phys. Lett.,2010

4. Green luminescent center in undoped zinc oxide films deposited on silicon substrates;Lin;Appl. Phys. Lett.,2001

5. Realization of p-type non-polar a-plane ZnO films via doping of Na acceptor;Ding;Solid State Commun.,2013

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1. ZnO with p-Type Doping: Recent Approaches and Applications;ACS Applied Electronic Materials;2023-08-07

2. Interplay of defects in low energy nitrogen implanted ZnO nanorods;Applied Surface Science;2021-10

3. Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review;ACS Applied Electronic Materials;2021-08-18

4. Synthesis of p–n junctions in ZnO nanorods by O+ ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-10
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