Mn-doped GaN/AlN heterojunction for spintronic devices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Spintronics: A spin-based electronics vision for the future;Wolf;Science,2001
2. Half-Metallicity and Efficient Spin Injection inAlN/GaN∶Cr(0001) Heterostructure
3. Optical and magnetic properties of (Ga1−xMnx)N/GaN digital ferromagnetic heterostructures
4. The density functional formalism, its applications and prospects
5. Self-interaction correction to density-functional approximations for many-electron systems
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4. Optical Properties of One-Dimensional Structured GaN:Mn Fabricated by a Chemical Vapor Deposition Method;Journal of Engineering;2013
5. Giant magnetoresistance of Co/ITO multilayers;Solid State Communications;2009-12
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