High-performance flexible resistive memory devices based on Al2O3:GeOx composite-Reference-Cited by-同舟云学术

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High-performance flexible resistive memory devices based on Al2O3:GeOx composite

Published:2018-05 Issue: Volume:117 Page:298-304
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Behera Bhagaban,Maity Sarmistha,Katiyar Ajit K.,Das Samaresh

Funder

Department of Electronics and Information Technology (DeitY) India

Department of Science and Technology India for Women Scientist (WOS-A) fellowship

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

2. Resistive switching in transition metal oxides

3. Multifunctional wearable devices for diagnosis and therapy of movement disorders

4. Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory

5. A Novel RRAM Stack With ${\rm TaO}_{x}/{\rm HfO}_{y}$ Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected Subcells

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