Optical properties of (Al Ga1-)2O3 on sapphire-Reference-Cited by-同舟云学术

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Optical properties of (Al Ga1-)2O3 on sapphire

Published:2018-02 Issue: Volume:114 Page:82-88
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Hu Zhuangzhuang,Feng Qian,Zhang Jincheng,Li Fuguo,Li Xiang,Feng Zhaoqing,Zhang Chunfu,Hao Yue

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Comparison study of, β-Ga2O3 photodetectors on bulk substrate and sapphire;Feng;IEEE Trans. Electron Devices,2016

2. Growth, structure and carrier transport properties of Ga2O3, epitaxial film examined for transparent field-effect transistor;Matsuzaki;Thin Solid Films,2006

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3(010) substrates;Higashiwaki;Appl. Phys. Lett.,2012

4. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals;Ueda;Appl. Phys. Lett.,1997

5. Characterization of sapphire surfaces by electron energy-loss spectroscopy;Gillet;Surf. Sci.,1992

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of sputtering power on the properties of Al-doped Ga2O3 thin films;Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023);2024-02-01

2. (AlxGa1-x)2O3-based materials: Growth, properties, and device applications;Journal of Alloys and Compounds;2023-10

3. Effects of Substrate Bias Voltage on Structural and Optical Properties of Co-Sputtered (AlxGa1–x)2O3 Films;Journal of Electronic Materials;2023-08-27

4. The Heteroepitaxy of Thick β-Ga2O3 Film on Sapphire Substrate with a β-(AlxGa1−x)2O3 Intermediate Buffer Layer;Materials;2023-03-30

5. Tb-doped β-(Al_xGa_1-x)₂O₃ epitaxial films on c-sapphire substrates fabricated via a spin-coating method;J ALLOY COMPD;2022

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