Potential study of the enhanced breakdown voltage GaN MISFET based on partial AlN buried layer-Reference-Cited by-同舟云学术

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Potential study of the enhanced breakdown voltage GaN MISFET based on partial AlN buried layer

Published:2018-02 Issue: Volume:114 Page:314-320
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Fei Xin-Xing,Wang Ying,Luo Xin,Cao Fei,Yu Cheng-Hao

Funder

Excellent Youth Foundation of Zhejiang Province of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference43 articles.

1. GaN on Si technologies for power switching devices;Ishida;IEEE Trans. Electron. Dev.,2013

2. GaN-based RF power devices and amplifiers;Mishra;Proc. IEEE,2008

3. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment;Cai;IEEE Electron. Device Lett.,2005

4. Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer;Hilt,2010

5. AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications;Oka;IEEE Electron. Device Lett.,2008

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1. Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer;Journal of Electronic Materials;2024-03-05

2. AlGaN/GaN Field Effect Transistor with Gate Recess Structure and HfO₂ Gate Oxide;KOREAN CHEM ENG RES;2022

3. Effects of gate width variation on the performance of Normally‐OFF dual‐recessed gate MIS AlGaN / GaN HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-09-28

4. Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators*;Chinese Physics B;2020-07-01

5. Comparative Study of Characteristics and Interface States with and without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO 2 Gate Insulator on Si Substrates;physica status solidi (a);2020-03

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