Large optical gain from the 2D-transition metal dichalcogenides of MoS2/WSe2 quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference28 articles.
1. Electrical properties of wafer-bonded GaAs/Si heterojunctions
2. Recent progress in lasers on silicon
3. Band offsets and heterostructures of two-dimensional semiconductors
4. Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface
5. k · p theory for two-dimensional transition metal dichalcogenide semiconductors
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3. Temperature dependence of optical gain in compressively strained InAsP/GaInAs based quantum well heterostructure for short wavelength infrared applications;Physica B: Condensed Matter;2024-03
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