Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs-Reference-Cited by-同舟云学术

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Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs

Published:2016-09 Issue: Volume:97 Page:258-267
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Swain Sanjit Kumar,Adak Sarosij,Pati Sudhansu Kumar,Sarkar Chandan Kumar

Funder

Department of Science and Technology

All India Council for Technical Education, India

Silicon Institute of Technology, Patia Hills, Bhubaneswar

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance

2. Schottky Source/Drain InAlN/AlN/GaN MISHEMT With Enhanced Breakdown Voltage

3. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

4. AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

5. International Electron Devices Meeting;Medjdoub,2006

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1. Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone;Microelectronics Journal;2024-05

2. High-Quality AlGaN/GaN HEMTs Growth on Silicon Using Al_0.07Ga_0.93N as Interlayer for High RF Applications;ECS Journal of Solid State Science and Technology;2023-10-01

3. Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications;Physica Scripta;2023-09-14

4. Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors;Microelectronics Journal;2023-09

5. 9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device;Microelectronics Journal;2023-07

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