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Efficiency droop enhancement in AlGaN deep ultraviolet light-emitting diodes by making whole barriers but the bottom Mg doped

  • Published:2016-09 Issue: Volume:97 Page:371-377
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Sun Jie,Sun Huiqing,Yi Xinyan,Yang Xian,Fan Xuancong,Zhang Cheng,Zhang Zhuding,Guo Zhiyou

Funder

Innovation of Forefront and Key Technology of Guangdong Province, China

Key Science and Technology of Zhongshan City, Guangdong Province, China

Huadu District semiconductor applications engineering and technology research and development centers

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides;Khan;Nat. Photonics,2008

2. Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness;Li;Appl. Phys. Lett.,2007

3. Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop;Schubert;Appl. Phys. Lett.,2008

4. Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes;David;Appl. Phys. Lett.,2008

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