Enhanced lateral growth of AlN epitaxial layer on sapphire by introducing periodically pulsed-TMGa flows-Reference-Cited by-同舟云学术

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Enhanced lateral growth of AlN epitaxial layer on sapphire by introducing periodically pulsed-TMGa flows

Published:2019-07 Issue: Volume:131 Page:59-65
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Qiu Xinjia,Lv Zesheng,He Yingyou,Wu Zhisheng,Jiang Hao

Funder

National key R&D Program of China

National Natural Science Foundation of China

Guangdong Natural Science Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

2. AlGaN solar-blind avalanche photodiodes with high multiplication gain

3. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN;Vacuum;2022-11

2. The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer;Micro and Nanostructures;2022-08

3. Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies;Materials Research Bulletin;2021-08

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