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A novel 4H–SiC MESFET with clival gate

  • Published:2015-07 Issue: Volume:83 Page:29-34
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Jia Hujun,Xing Ding,Zhang Hang,Pei Xiaoyan,Sun Zhelin,Yuan Yingchun

Funder

National Key Basic Research Program of China (973 Program)

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved 4H–SiC MESFET with bulgy channel;Micro and Nanostructures;2022-06

2. A novel 4H-SiC MESFET with multi-recessed p-buffer layer for high energy-efficiency applications;Superlattices and Microstructures;2017-12

3. A novel 4H-SiC MESFET with double upper gate and recessed p-buffer;Superlattices and Microstructures;2016-09

4. RF characteristics for 4H-SiC MESFET with a clival gate;Materials Science in Semiconductor Processing;2015-12
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