First-principles investigation of ternary two-dimensional (2D) AlxB1-x N monolayer alloys

Author:

Chabane Chaouche Abdallah,Lachebi Abdelhadi,Abid Hamza,Benchehima Miloud,Driz Mohammed

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference66 articles.

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2. Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers;Malinauskas;Phys. Status Solidi,2006

3. Growth and applications of group III-nitrides;Ambacher;J. Phys. D Appl. Phys.,1998

4. Properties of AlN film grown on Si (111);Dai;J. Cryst. Growth,2016

5. A first-principles study of the mechanical properties of AlN with Raman verification;Dai;Comput. Mater. Sci.,2016

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