Author:
Liu Xiangyu,Hu Huiyong,Wang Meng,Zhang Heming,Wang Bin,Shu Bin,Han Genquan
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference28 articles.
1. CMOS performance benchmarking of Si, InAs, GaAs, and Ge nanowire n- and pMOSFETs with Lg=13 nm based on atomistic quantum transport simulation including strain effects;Kim,2015
2. Enhanced hole mobility of Ge/GeSn pMOSFETs with a GeSnO interface layer and a NiGe Schottky source/drain;Zhao,2014
3. III–V/Ge MOSFETs and tunneling FETs on Si platform for low power logic applications;Takagi,2015
4. N-MOSFETs formed on solid phase epitaxially grown GeSn film with passivation by oxygen plasma featuring high mobility;Fang;Acs Appl. Mater. Interfaces,2015
5. Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain;Chern;IEEE Electron Device Lett.,2014
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献