Author:
Chernyakov A.E.,Sobolev M.M.,Ratnikov V.V.,Shmidt N.M.,Yakimov E.B.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
2. High-Efficiency GaN/AlxGa1?xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1?xN
3. Dislocation effect on light emission efficiency in gallium nitride
4. Jiawei Li, Vinod Adivarahan, Maxim Shatalov, Qhalid Fareed, Jinwei Yang, Asif Khan, International Workshop on Nitride Semiconductor, October 22–27, Kyoto, Japan, IWN (2006) 490
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