Quantum corrected drift diffusion based noise model for impact avalanche and transit time diode

Author:

Chandra Ghivela GirishORCID,Sengupta Joydeep,Mitra Monojit

Funder

Department of Electronics and Communication Engineering

Visvesvaraya National Institute of Technology, Nagpur, India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Physics of Semiconductor Devices;Sze,2007

2. Computer Simulation Study on the noise and millimeter wave properties of InP/GaInAs heterojunction double avalanche region IMPATT diode;Mishra;Solid State Electron.,2004

3. Noise in mixed tunneling Avalanche transit time (MITATT) diodes;Dash;Solid State Electron.,1996

4. A small signal theory of avalanche noise in IMPATT diodes;Gummel;IEEE Trans. Electron Devices,1967

5. An Extremely low noise heterojunction IMPATT;Mishra;IEEE Trans. Electron Devices,1997

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