MOVPE growth study of BxGa(1−x)N on GaN template substrate-Reference-Cited by-同舟云学术

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MOVPE growth study of BxGa(1−x)N on GaN template substrate

Published:2006-10 Issue:4-6 Volume:40 Page:233-238
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Gautier S.,Sartel C.,Ould Saad Hamady S.,Maloufi N.,Martin J.,Jomard F.,Ougazzaden A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference3 articles.

1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

2. Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy

3. Very uniform epitaxy

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1. Electron confinement enhancement in AlGaN/AlN/GaN HEMT using BGaN buffer;Journal of Ovonic Research;2023-02-20

2. A comprehensive review on the effects of local microstructures and nanoscale chemical features on B-III-nitride films;Journal of Materials Research;2021-09-01

3. Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer;Chinese Physics B;2019-04

4. Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography;Journal of Applied Physics;2017-06-14

5. Phase degradation in BxGa1−xN films grown at low temperature by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2017-04

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