EBIC and CL studies of ELOG GaN films-Reference-Cited by-同舟云学术

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EBIC and CL studies of ELOG GaN films

Published:2009-04 Issue:4-5 Volume:45 Page:308-313
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Yakimov E.B.,Vergeles P.S.,Govorkov A.V.,Polyakov A.Y.,Smirnov N.B.,Lee In-Hwan,Ro Lee Cheul,Pearton S.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. GaN and Related Materials II;Popovici,2000

2. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

3. GaN and Related Materials II;Nakamura,2000

4. Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN

5. Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films

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1. Study of Wide-Gap Semiconductors Using Electron-Beam Induced Current Method;Crystallography Reports;2021-07

2. Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress;Journal of Alloys and Compounds;2019-03

3. Investigation of the Effect of Electron-Beam Irradiation on the Defect Structure of Laterally Overgrown GaN Films via the Induced-Current and Cathodoluminescence Methods;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2018-09

4. Surface Dielectric Tunnel Barrier Induced by Mn Doping in SnO2 Micro- and Nanostructures;physica status solidi (a);2018-06-25

5. Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN;Journal of Applied Physics;2016-05-28

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