Quantum fluctuations in atomistic semiconductor devices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions
2. Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices
3. Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFETs with ultrathin gate oxide
4. Two-dimensional quantum mechanical modeling of nanotransistors
5. N. Nguyen, Ph.D. Thesis, Stanford University, 1984
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1. Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET;Journal of Applied Physics;2015-04-28
2. Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors;IEEE Transactions on Electron Devices;2011-08
3. Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study;IEEE Transactions on Electron Devices;2010-07
4. Green function study of quantum transport in ultra-small devices with embedded atomistic clusters;Journal of Physics: Conference Series;2006-04-01
5. Vortex Flows in Semiconductor Device Quantum Channels: Time-Dependent Simulation;Journal of Computational Electronics;2004-10
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