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Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing

  • Published:2019-01 Issue: Volume:125 Page:256-270
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Jayaswal Neha,Raman Ashish,Kumar Naveen,Singh Sarabdeep

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Vertical nanowire FET integration and device aspects;Veloso;ECS Transactions,2016

2. December. High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material;Suresh,2007

3. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011

4. Gate-All-Around charge plasma-based dual material gate-stack nanowire FET for enhanced analog performance;Singh;IEEE Trans. Electron. Dev.,2018

5. December. Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETs;De Marchi,2012

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